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STP9NK60ZFD - STP9NK60ZFDFP STB9NK60ZFD
N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESHTM MOSFET
TARGET DATA TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFD
s s s s s s
VDSS 600 V 600 V 600 V
RDS(on) < 0.95 < 0.95 < 0.95
ID 7A 7A 7A
Pw 104 W 32 W 104 W
3 1 2
s
TYPICAL RDS(on) = 0.85 HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY FAST INTERNAL RECOVERY DIODE
TO-220
TO-220FP
3 1
D2PAK
DESCRIPTION The Fast SuperMESHTM series associates all advantages of reduced on-resistance, zener gate protection and very goog dv/dt capability with a Fast body-drain recovery diode. Such series complements the "FDmeshTM" Advanced Technology. APPLICATIONS HID BALLAST s ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS
s
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE STP9NK60ZFD STP9NK60ZFDFP STB9NK60ZFDT4 MARKING P9NK60ZFD P9NK60ZFDFP B9NK60ZFD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL
July 2003
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value TO-220 / D2PAK VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Gate source ESD (HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 150 7 4.3 28 104 0.83 4000 TBD 2500 600 600 30 7 (*) 4.3 (*) 28 (*) 32 0.26 TO-220FP V V V A A A W W/C V V/ns V C Unit
( ) Pulse width limited by safe operating area (1) ISD 7A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed
THERMAL DATA
TO-220 D2PAK Rthj-case Rthj-pcb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
TO-220FP 3.85
Unit C/W C/W
1.02 30 62.5 300
Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose
C/W C
AVALANCHE CHARACTERISTICS
Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 7 280 Unit A mJ
GATE-SOURCE ZENER DIODE
Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs= 1mA (Open Drain) Min. 30 Typ. Max. Unit V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) ON/OFF
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-source On Resistance Test Conditions ID = mA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V VDS = VGS, ID = 100A VGS = 10V, ID = 3.5 A 3 3.75 0.85 Min. 600 1 50 10 4.5 0.95 Typ. Max. Unit V A A A V
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Coss eq. (3) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDS = 15 V, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.3 1110 135 30 72 Max. Unit S pF pF pF pF
VGS = 0V, VDS = 0V to 480V
SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, VGS = 10V Min. Typ. 19 17 38 7 21 53 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 300 V, ID = 3.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 480V, ID = 7 A, RG = 4.7, VGS = 10V (Inductive Load see, Figure 5) Min. Typ. 43 15 11 8 20 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 7 A, VGS = 0 ISD = 7 A, di/dt = 100A/s VDD = 30V, Tj = 150C (see test circuit, Figure 5) 150 TBD TBD Test Conditions Min. Typ. Max. 7 28 1.6 Unit A A V ns C A
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
TO-220 MECHANICAL DATA
mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 oP Q
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
TO-220FP MECHANICAL DATA
mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O
A
B
L3 L6 L7
F1 F
D
G1 H
F2
L2 L5
E
123
L4
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G
STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
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STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W
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BASE QTY 1000
mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
* on sales type
STP9NK60ZFD - STP9NK60ZFDFP - STB9NK60ZFD
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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